30f124 transistor datasheet bookshelf

In certain cases, the quoted collector current may be exceeded. Discrete igbt 30f124 gt30f124 300v 200a to220sis package, 30f124 pdf download toshiba, 30f124 datasheet pdf, pinouts, data sheet, circuits. Mos fet realizes low onstate resistance with even compact packages. Toshiba transistor silicon pnp epitaxial type pct process. We have the broadest line of bipolar power transistors in the industry and the motorola commitment to quality and total customer satisfaction to go with them. The top countries of suppliers are turkey, china, from which the percentage of transistor 30f124 supply is 1%, 99% respectively. Texas instruments transistor and diode databook 1st ed 1973 datasheets for diodes from 1n251 on and transistors from 2n117 on acrobat 7 pdf 34. A1015 pnp epitaxial silicon transistor elite enterprises h. Data sheets contain information regarding a product macom technology solutions is considering for development. Igbts combine the mosfet advantage of high input impedance with the bipolar transistor advantage of highvoltage drive. Mps4124 amplifier transistor npn silicon features pb.

A wide variety of transistor 30f124 options are available to you, there are 464 suppliers who sells transistor 30f124 on, mainly located in asia. Characteristic symbol rating unit collectorbase voltage collectoremitter voltage emitterbase voltage collector current dc collector dissipation tc25. Toshiba transistor silicon npn epitaxial type 2sc2878. Gt30f124 transistor datasheet, gt30f124 equivalent, pdf data sheets. Bipolar power transistor selection guide january 2003 table of contents product page general purpose transistors horizontal deflection output transistors product page dpak d2pak sot223 ipak to126 todarlington transistors dpak ipak to126 to220 to220f to3p to3pf switching transistors dpak d2pak to92 to126 to220 to220f to3p to3pf 2. The toshiba discrete igbts are available in highvoltage and highcurrent ratings. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical. Applications general purpose switching and amplification inverter and interface circuits circuit driver. Dtc114em dtc114ee dtc114eua dtc114eka dtc114esa 100ma. This page describes the thermal and electrical characteristics of the mosfet shown in its datasheet such as leakage current, cutoff current, breakdown voltage. Use the easy search guide below to go through categories like computer systems, electromechanical components, and optoelectronics, and fine tune your search by selecting from various end markets like consumer appliances, lighting, and broadcast technologies.

Performance is based on target specifications, simulated results, andor prototype measurements. Toshiba transistor silicon pnp epitaxial type pct process 2sa10 color tv verttical deflection output applications power switching applications high voltage. Gouptec 10pcs 30f124 gt30f124 igbt high speed switching to. The conductivity modulation characteristics of a bipolar transistor make it ideal for load control applications that require high breakdown voltage and high current.

Lg 42pw451 zd plasma repair board irg7ic28u 2piece. Gouptec 10pcs 30f124 gt30f124 igbt high speed switching to220. Dtc114em dtc114ee dtc114eua dtc114eka dtc114esa zapplications inverter, interface, driver zfeatures 1 builtin bias resistors enable the configuration of an inverter circuit without connecting external input resistors see equivalent circuit. Fairchild semiconductor reserves the right to make changes at any time without notice to improve design. Select the part name and then you can download the datasheet in pdf format. The device is a npn transistor manufactured by using planar technology resulting. It is thus difficult to improve the conduction loss of power mosfets. Npn silicon transistor pin connection descriptions switching application interface circuit and driver circuit application features with builtin bias resistors simplify circuit design reduce a quantity of parts and manufacturing process high packing density ordering information type no. Here youll find detailed product descriptions and quickclick access to product datasheets.

Discrete 300v, 200a, igbt insulatedgate bipolar transistor. Transistor datasheet, transistor pdf, transistor data sheet, datasheet, data sheet, pdf. Find pdf c945 transistor related suppliers, manufacturers, products and. Pdta124e series features builtin bias resistors simplified circuit design reduction of component count reduced pick and place costs. Free packages are available maximum ratings rating symbol value unit collector. Discrete 300v, 200a, igbt insulatedgate bipolar transistor package.